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  savantic semiconductor product specification silicon npn power transistors 2SC3345 d escription with to-220 package complement to type 2sa1328 low collector saturation voltage high speed switching time applications high current switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 60 v v ceo collector- emitter voltage open base 50 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i b base current 2 a p c collector power dissipation t c =25 40 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon npn power transistors 2SC3345 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ,i b =0 50 v v cesat collector-emitter saturation voltage i c =6a; i b =0.3a 0.4 v v besat base-emitter saturation voltage i c =6a; i b =0.3a 1.2 v i cbo collector cut-off current v cb =60v; i e =0 10 a i ebo emitter cut-off current v eb =6v; i c =0 10 a h fe-1 dc current gain i c =1a ; v ce =1v 70 240 h fe-2 dc current gain i c =6a ; v ce =1v 40 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 180 pf f t transition frequency i c =1a ; v ce =5v 90 mhz switching times t on turn-on time 0.2 s t s storage time 1.0 s t f fall time i c =6.0a i b1 =- i b2 =0.3a r l =5 b ;v cc =30v 0.2 s  h fe-1 classifications o y 70-140 120-240
savantic semiconductor product specification 3 silicon npn power transistors 2SC3345 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3345


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